5 edition of Silicon Molecular Beam Epitaxy Reproduced from Thin Solid Films found in the catalog.
Published
February 1990
by Elsevier Science Ltd
.
Written in
Edition Notes
| Contributions | E. H. C. Parker (Editor), European Materials Research Society (Corporate Author) |
| The Physical Object | |
|---|---|
| Number of Pages | 854 |
| ID Numbers | |
| Open Library | OL7533522M |
| ISBN 10 | 0444886206 |
| ISBN 10 | 9780444886200 |
Mismatch‐induced lattice strain in thin Si films grown by molecular beam epitaxy on GaP() substrates has been measured using transmission electron microscopy, Raman spectroscopy, and Rutherford backscattering. The perpendicular strain in the topmost part of the layers is found to be enhanced in comparison to elasticity theory. Relaxation of the strain occurs by the formation of misfit Cited by: SrTiO3 (STO) crystalline layers grown on Si open unique perspectives for the monolithic integration of functional oxides in silicon-based devices, but their fabrication by molecular beam epitaxy (MBE) is challenging due to unwanted interfacial reactions. Here we show that the formation of single-crystal STO layers on Si by MBE at the moderate growth temperature imposed by these interface Cited by:
This paper describes the generalities of molecular beam epitaxy (MBE); it is intended for those interested rather than involved in MBE. MBE has been applied to the growth of thin films of a variety of materials: III-V semiconductors, II-VI's, IV-VI's, silicon and germanium, metals and : Gary W. Wicks. It is equipped with electron beam evaporation sources for silicon epitaxy, effusion cells and combines electronic sensor feedback to achieve highly reproducible thin films. The flexibility of the molecular beam epitaxy system configuration enables use of the system for a wide variety of application purposes.
Ge films with a thickness of nm were epitaxially grown on the nanodot seed crystals by solid source molecular beam epitaxy. The resulting Ge films typically exhibited a surface roughness of 0. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon Cited by:
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Silicon Molecular Beam Epitaxy Reproduced from Thin Solid Films: Proceedings of the 3rd International Symposium on Silicon Molecular Beam Epitaxy, Strasbourg, France, 30 (VOLS & ) [International Symposium on Silicon Molecular Beam Epitaxy strasb, Kasper, Erich, European Materials Research Society, Parker, E.
C.] on *FREE* shipping on. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M.
Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges.
Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Purchase Silicon Molecular Beam Epitaxy, Volume 10A - 1st Edition. Print Book & E-Book.
ISBNBook Edition: 1. : Silicon Molecular Beam Epitaxy, Vol. II (): Erich Kasper, John C. Bean: Books. Abstract. Molecular-beam epitaxy (MBE) of silicon is attracting increasing scientific and practical interest due to the low film growth temperatures and the accurate control of their thickness, composition, and doping level.
These capabilities enable thin multilayered structures with strictly controlled composition and very sharp doping profiles Cited by: 1. SILICON MOLECULAR BEAM EPITAXY: A COMPREHENSIVE BIBLIOGRAPHY J.C. Bean and S.R. McAfee BeZZ Labs, Murray HiZZ, New JerseyU.S.A. R6sumd.- Nous avons compild une bibliographie de plus de rbfdrences s1Qtendant sur les 20 premisres anndes de l'dpitaxie par jets moldculaires du silicium.
Films by Molecular-Beam Epitaxy. Single crystal silicon films of both types have been deposited in a high (10−5 torr) vacuum system. The EuO layers as thin as nm were ferromagnetic. A model for Si() molecular beam epitaxy (MBE) based on Monte Carlo simulations is applied in order to study the influence of different parameters.
Since then, it has been amply demonstrated that the silicon MBE technique is capable of producing epitaxial films suitable for silicon device applications. Because of the low growth temperature, flexible and precise doping capability and precise thickness control of silicon MBE, unique silicon devices have been by: We have used low‐temperature silicon molecular beam epitaxy to grow a δ‐doped silicon layer on a fully processed charge‐coupled device (CCD).
The measured quantum efficiency of the δ‐doped backside‐thinned EG&G Reticon CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of Cited by: J.
Bean /Silicon molecular beam epitaxy: — accumulated surface layers of dopant knocking a would lack sufficient energy to migrate or re- fraction of these dopant atoms a short distance evaporate. Thiswould eliminate the need for more into the layer.
Read the latest articles of Thin Solid Films atElsevier’s leading platform of peer-reviewed scholarly literature Sixth International Conference on Silicon Epitaxy and Heterostructures.
Edited by Ya-Hong Xie, Jianlin Liu, Epitaxial growth of a full-Heusler alloy Co 2 FeSi on silicon by low-temperature molecular beam. : Silicon Molecular Beam Epitaxy: Volume II (): E.
Kasper: Books Books Go Search Hello Select your address Today's Deals Best Sellers Customer Service Find a. Ge x Si 1 − x layers are grown on Si substrates over the full range of alloy compositions at temperatures from – °C by means of molecular beam epitaxy.
At a given growth temperature films grow in a smooth, two‐dimensional manner up to a critical germanium fraction x x c growth is rough. x c increases from at °C to at ∼ ° by: Abstract. Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi).
We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is Author: L. Favre, I. Berbezier, A. Ronda, M. Aouassa, S. Escoubas, R. Mahamdi, S. Gouder, L. Tebessi. Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications.
The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of. Abstract. The elucidation of elementary processes occurring on a surface during sublimation and epitaxy is a fundamental problem for the physics of semiconductors.
The determination of the nature of superstructure reconstructions, the structure of surface defects, the kinetics of adatoms, and the mechanisms of interaction with troughs are some Cited by: 1. We have produced a novel form of amorphous silicon (a-Si) using ultra-high-vacuum molecular beam epitaxy.
By depositing silicon atoms onto a fused quartz substrate at ∼°C, we have obtained a silicon based material that lacks the characteristic periodicity of crystalline silicon but nevertheless has 98% of its by: Recent Thin Solid Films Articles Recently published articles from Thin Solid Films.
Effects of annealing temperature and pressure of vacuum infiltration on the electrical properties of Pb(ZrTi)O3 thick films prepared via a modified sol–gel method.
We have used time-resolved terahertz spectroscopy to study microscopic photoconductivity and ultrafast photoexcited carrier dynamics in thin, pure, non-hydrogenated silicon films grown by molecular beam epitaxy on quartz substrates at Cited by: 4.
The growth by molecular beam epitaxy of GeTe thin films on highly lattice-mismatched Si() substrates is reported. In situ reflection high-energy electron diffraction and quadrupole mass.Epitaxial La-doped BaSnO 3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnO x desorbs from the film surface.
A film grown on a () DyScO 3 substrate exhibited a mobility of cm 2 V −1 s −1 at room temperature and cm 2 V −1 s −1 at 10 K despite the high concentration ( × 10 11 cm −2) of threading dislocations Cited by: Abstract. When the adsorbate coverage exceeds the monolayer range, one speaks about thin film oriented growth of a crystalline film on a single-crystal substrate is referred to as epitaxy, which, in turn, is subdivided into homoepitaxy (when both film and substrate are of the same material) and heteroepitaxy (when film and substrate are different).Cited by:
